Juergen Steinbrenner
26Patents
1h-index
66Co-inventors
52Inventor score
Filing activity: Jan 30, 2014 → May 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10629416B2 | Wafer chuck and processing arrangement | Electricity | 1 | Active |
| US11211303B2 | Semiconductor device including a passivation structure and manufacturing method | Electricity | 1 | Active |
| US9455136B2 | Controlling the reflow behaviour of BPSG films and devices made thereof | Electricity | 1 | Active |
| US9984915B2 | Semiconductor wafer and method for processing a semiconductor wafer | Electricity | 0 | Active |
| US9768273B2 | Method of forming a trench using epitaxial lateral overgrowth | Electricity | 0 | Active |
| US11075134B2 | Semiconductor device with a portion including silicon and nitrogen and method of manufacturing | Electricity | 0 | Active |
| US9704800B2 | Nanotube structure based metal damascene process | Electricity | 0 | Active |
| US10777506B2 | Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
| US9478409B2 | Method for coating a workpiece | Electricity | 0 | Active |
| US9379196B2 | Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure | Electricity | 0 | Active |
| US9159669B2 | Nanotube structure based metal damascene process | Electricity | 0 | Active |
| US10049879B2 | Self aligned silicon carbide contact formation using protective layer | Electricity | 0 | Active |
| US10347491B2 | Forming recombination centers in a semiconductor device | Electricity | 0 | Active |
| US11804415B2 | Semiconductor device with first and second portions that include silicon and nitrogen | Electricity | 0 | Active |
| US10475743B2 | Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
| US11387095B2 | Passivation structuring and plating for semiconductor devices | Electricity | 0 | Active |
| US11387081B2 | Wafer chuck and processing arrangement | Electricity | 0 | Active |
| US9728480B2 | Passivation layer and method of making a passivation layer | Electricity | 0 | Active |
| US11352253B2 | Semiconductor device, microphone and methods for forming a semiconductor device | Electricity | 0 | Active |
| US10910309B2 | Nanotube structure based metal damascene process | Electricity | 0 | Active |
| US9941111B2 | Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer | Electricity | 0 | Active |
| US9773736B2 | Intermediate layer for copper structuring and methods of formation thereof | Electricity | 0 | Active |
| US9666482B1 | Self aligned silicon carbide contact formation using protective layer | Electricity | 0 | Active |
| US10325803B2 | Semiconductor wafer and method for processing a semiconductor wafer | Electricity | 0 | Active |
| US10858246B2 | Semiconductor device, microphone and methods for forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.