Molded etch masks
US10910514B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Dec 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques related to molded etch masks are disclosed. Etch masks can be formed based on pressing a mold against a layer of pliable masking material applied to a surface of an epitaxial layered structure. The epitaxial layered structure includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first and second semiconductor layers. The epitaxial layered structure is etched using the molded etch masks to form etched structures. The etched structures may be optical structures that modify light emitted through the surface or epitaxial mesas that collimate light within the epitaxial layered structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.