Apparatus and method of forming plasma using a pulsed waveform
US10916408B2 · kind B2 · utility
47Cited by
129References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.