Active control of radial etch uniformity
US10916409B2 · kind B2 · utility
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5References
29Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 18, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jun 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.