Semiconductor device including silane based adhesion promoter and method of making
US10916486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2016 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments disclosed relate to semiconductor device and method of making the same using functional silanes. In various embodiments, the present invention provides a semiconductor device including a silicon die component having a first silica surface. The semiconductor device includes a dielectric layer having a second surface generally facing the first silica surface. The semiconductor device includes an interface defined between the first surface and the second surface. The semiconductor device also includes a silane based adhesion promoter layer disposed within the junction and bonded to at least one of the first silica surface and the dielectric layer second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.