Method for manufacturing magnetic memory element with post pillar formation annealing
US10916696B2 · kind B2 · utility
5Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | May 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a magnetic memory element structure using a Ru hard mask and a post pillar thermal annealing process. A Ru hard mask is formed over a plurality of memory element layers and an ion milling is performed to transfer the image of the Ru hard mask onto the underlying memory element layers. A high-angle ion milling an be performed to remove any redeposited material from the sides of the memory element layers, and a non-magnetic, dielectric material can be deposited. A thermal annealing process can then be performed to repair any damage caused by the previously performed ion milling processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.