Self-stopping polishing composition and method for bulk oxide planarization
US10920107B2 · kind B2 · utility
1Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2020 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Feb 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.