Patent · US Active

Piezoelectric package-integrated current sensing devices

US10921349B2 · kind B2 · utility

1Cited by

4References

22Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Georgios Dogiamis · Chandler, US
Adel A. Elsherbini · Chandler, US
Shawna M. Liff · Scottsdale, US
Johanna M. Swan · Scottsdale, US
Jelena Culic-Viskota · Chandler, US
Thomas L. Sounart · Chandler, US
Feras Eid · Chandler, US
Sasha N. Oster · Chandler, US

Key dates

Filing date	Jul 1, 2016
Grant date	Feb 16, 2021
Priority date	—
Expiry date	Oct 13, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10N35/80
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Embodiments of the invention include a current sensing device for sensing current in an organic substrate. The current sensing device includes a released base structure that is positioned in proximity to a cavity of the organic substrate and a piezoelectric film stack that is positioned in proximity to the released base structure. The piezoelectric film stack includes a piezoelectric material in contact with first and second electrodes. A magnetic field is applied to the current sensing device and this causes movement of the released base structure and the piezoelectric stack which induces a voltage (potential difference) between the first and second electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.