Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
US10921705B2 · kind B2 · utility
1Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Nov 15, 2016 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/365
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.