Method of controlling an implanter operating in plasma immersion
US10923325B2 · kind B2 · utility
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3References
5Claims
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Assignee
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Key dates
| Filing date | Dec 5, 2016 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Oct 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2236
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of controlling an implanter operating in plasma immersion, the method including the steps of: The method is remarkable in that the duration of the expulsion stage is longer than 5 μs.The invention also provides a power supply for biasing an implanter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.