Laurent Roux
15Patents
1h-index
12Co-inventors
47Inventor score
Filing activity: Dec 14, 2001 → Sep 6, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7756377B2 | Waveguide comprising a channel on an optical substrate | Physics | 2 | Expired |
| US9035269B2 | Control module for an ion implanter | Physics | 1 | Active |
| US9552962B2 | Method of controlling an ion implanter in plasma immersion mode | Electricity | 1 | Active |
| US9524853B2 | Ion implantation machine presenting increased productivity | Electricity | 1 | Active |
| US9520274B2 | Ion implanter provided with a plurality of plasma source bodies | Electricity | 1 | Active |
| US8895945B2 | Dose measurement device for plasma-immersion ion implantation | Electricity | 1 | Active |
| US11053582B2 | Support including an electrostatic substrate carrier | Electricity | 0 | Active |
| US10923325B2 | Method of controlling an implanter operating in plasma immersion | Electricity | 0 | Active |
| US11199446B2 | Method for limiting crosstalk in an image sensor | Physics | 0 | Active |
| US11143554B2 | Multispectral imaging device with array of microlenses | Physics | 0 | Active |
| US10567073B2 | Communication device for processing interference between signals transmitted in neighbouring transmitting spots, method associated therewith | Electricity | 0 | Active |
| US11862658B2 | Multispectral imaging sensor provided with means for limiting crosstalk | Physics | 0 | Active |
| US12266692B2 | Device for improving the mobility of carriers in a MOSFET channel on silicon carbide | Electricity | 0 | Active |
| US9534287B2 | Machine for implanting ions in plasma immersion mode for a low-pressure method | Electricity | 0 | Active |
| US9922856B2 | Electrostatic heating substrate holder which is polarised at high voltage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.