Plasma processing method and plasma processing apparatus
US10923328B2 · kind B2 · utility
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3References
10Claims
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Assignee
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Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.