Substrate processing apparatus and substrate processing method
US10923329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Sep 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.