Method for forming a functionalised guide pattern for a graphoepitaxy method
US10923352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2017 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Feb 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.