Limited dose and angle directed beam assisted ALE and ALD processes for localized coatings on non-planar surfaces
US10923359B2 · kind B2 · utility
0Cited by
6References
13Claims
0Family size
Inventors
Key dates
| Filing date | Jul 15, 2020 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jul 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for the localized etching of films on the sidewalls of non-planar 3D features such as a trench or a FinFET array. The etch process has a first step of an angle-directed ion implant beam, with the beam being self-aligned onto a localized region on a sidewall feature, that functionalizes the region for a second step that etches the ion implanted region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.