Bond pad with micro-protrusions for direct metallic bonding
US10923448B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2017 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01029
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bond pad with micro-protrusions for direct metallic bonding. In one embodiment, a semiconductor device comprises a semiconductor substrate, a through-silicon via (TSV) extending through the semiconductor substrate, and a copper pad electrically connected to the TSV and having a coupling side. The semiconductor device further includes a copper element that projects away from the coupling side of the copper pad. In another embodiment, a bonded semiconductor assembly comprises a first semiconductor substrate with a first TSV and a first copper pad electrically coupled to the first TSV, wherein the first copper pad has a first coupling side. The bonded semiconductor assembly further comprises a second semiconductor substrate, opposite to the first semiconductor substrate, the second semiconductor substrate comprising a second copper pad having a second coupling side. A plurality of copper connecting elements extend between the first and second coupling sides of the first and second copper pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.