Reduction of roughness on a sidewall of an opening
US10923478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Mar 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to reduction of roughness on a sidewall of an opening are described. An example method includes forming a liner material on a first sidewall of an opening in a first silicate material and on a second sidewall of the opening in an overlying second silicate material, where the liner material is formed to a thickness that covers a roughness on the first sidewall extending into the opening. The example method further includes removing the liner material from the first sidewall of the opening and the second sidewall of the opening with a non-selective etch chemistry to reduce the roughness on the first sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.