Memory device
US10923500B2 · kind B2 · utility
3Cited by
14References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
A memory device according to an embodiment includes a first conductive layer, a second conductive layer, and a first layer provided between the first conductive layer and the second conductive layer and containing aluminum oxide that contains at least one first element selected from the group consisting of magnesium (Mg), silicon (Si), hafnium (Hf), tungsten (W), and ruthenium (Ru), and the aluminum oxide is a ferroelectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.