Cavity structures under shallow trench isolation regions
US10923577B2 · kind B2 · utility
1Cited by
65References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to cavity structures under shallow trench isolation regions and methods of manufacture. The structure includes: one or more cavity structures provided in a substrate material and sealed with an epitaxial material; and a shallow trench isolation region directly above the one or more cavity structures in the substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.