Semiconductor device comprising Schottky barrier diodes
US10923603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Dec 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.