Light emitting diodes and associated methods of manufacturing

US10923627B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Scott D. Schellhammer · Meridian, US
• Scott E. Sills · Boise, US
• Lifang Xu · Boise, US
• Thomas Gehrke · Carrboro, US
• Zaiyuan Ren · Boise, US
• Anton J. De Villiers · Boise, US

Key dates

• Filing date: Aug 17, 2017
• Grant date: Feb 16, 2021
• Expiry date: Aug 30, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.