Method for the directed self-assembly of a block copolymer by graphoepitaxy
US10928725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2017 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | May 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.