Resistive memory with self-termination control function and self-termination control method
US10930346B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Nov 28, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory with a self-termination control function and a self-termination control method for a resistive memory are provided. At least one memory cell comprises a cell transistor and a resistive element. A termination switch coupled to a source line terminates a write operation according to a comparison result. The comparator compares a voltage of a source line node with a reference voltage to output the comparison result, wherein the source line node is between the at least one memory cell and the termination switch, and the voltage of the source line node responses to the resistance of the resistive element. The variable resistance circuit provides an effective resistance according to a target resistance of the resistive element and outputs a reference current. The reference voltage node is coupled to the variable resistance circuit and the comparator and receives the reference current to provide the reference voltage to the comparator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.