Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant
US10930508B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Sep 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of forming devices. One method may include providing a first set of fins and a second set of fins extending from a substrate, and providing a dummy oxide over the first set of fins and the second set of fins. The method may further include performing a thermal implant to the second set of fins, wherein the thermal implant is an angled ion implant impacting the dummy oxide. The method may further include removing the dummy oxide from the first set of fins and the second set of fins, and forming a first work function (WF) metal over the first set of fins and a second WF metal over the second set of fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.