Methods of forming an apparatus for making semiconductor dieves
US10930548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Jan 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.