Cap structure
US10930549B2 · kind B2 · utility
0Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.