Barrier for copper metallization and methods of forming
US10930550B2 · kind B2 · utility
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4References
18Claims
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Key dates
| Filing date | May 3, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | May 3, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.