IGBT having a barrier region

US10930772B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alexander Philippou · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Antonio Vellei · Villach, AT

Key dates

• Filing date: Sep 10, 2019
• Grant date: Feb 23, 2021
• Expiry date: Sep 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13055

Abstract

An IGBT having a barrier region is presented. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by means of the drift region. The barrier region can be electrically floating.