Magnetic tunnel junction with perpendicular shape anisotropy and minimised variability, memory point and logic element including the magnetic tunnel junction, method for manufacturing the magnetic tunnel junction
US10930841B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Feb 23, 2021 |
| Priority date | — |
| Expiry date | Mar 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer; a reference layer; a tunnel barrier layer, the two magnetisation states of the storage layer being separated by an energy barrier, the magnetic tunnel junction having a thermal stability factor dependent on the energy barrier and on the temperature of use of the magnetic tunnel junction. The storage layer has a thickness comprised between 0.5 times and 8 times a characteristic dimension of a planar section of the tunnel junction; the composition and the thickness of the storage layer are chosen such that the absolute value of the derivative of the thermal stability factor compared to a characteristic dimension of a planar section of the tunnel junction is less than 10 nm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.