Integration of epitaxially grown channel selector with MRAM device
US10937479B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2259
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory array having an epitaxially grown vertical semiconductor selector connected with a memory element via a bottom electrode such as TaN. An electrically conductive contact such as tungsten (W) or TaN can be included between the vertical semiconductor channel and the TaN bottom electrode. The electrically conductive contact and the TaN bottom electrode can both be formed by a damascene process wherein an opening is formed in an oxide layer and a metal is deposited into the opening. A chemical mechanical polishing process can then be performed to remove portions of the metal that extend out of the opening in the oxide layer over the oxide surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.