Memory cells and arrays of elevationally-extending strings of memory cells
US10937482B2 · kind B2 · utility
8Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Jun 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell comprises channel material, insulative charge-passage material, programmable material, a control gate, and charge-blocking material between the programmable material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material comprising hafnium, zirconium, and oxygen. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.