Microelectronic devices designed with ultra-high-k dielectric capacitors integrated with package substrates
US10937594B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 27, 2017 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Jun 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a microelectronic device that includes a plurality of organic dielectric layers and a capacitor formed in-situ with at least one organic dielectric layer of the plurality of organic dielectric layers. The capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.