Surface modification process
US10937664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.