Semiconductor device with air gap structure and method for preparing the same
US10937790B1 · kind B1 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Aug 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first bit line disposed over a semiconductor substrate. The semiconductor device also includes a capacitor contact and a dielectric structure disposed over the semiconductor substrate and adjacent to the first bit line. The capacitor contact, the dielectric structure and the first bit line are separated from one another by an air gap structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.