Pseudo-substrate for optoelectronic device and its manufacturing method
US10937827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength. The buffer structure including at least one second portion wherein a stack alternating layers of indium and gallium nitride (InGaN) and intermediate layers of GaN and in which the indium is present in a first weight ratio, delimits at least one free surface of a second type facing away from the upper face of the substrate, each free surface of the second type being suited to the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a second wavelength different from the first wavelength. The second portion of the buffer structure is offset relati…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.