Vertical transport FETs having a gradient threshold voltage
US10937883B2 · kind B2 · utility
2Cited by
11References
19Claims
0Family size
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Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Mar 2, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by introducing a threshold voltage modifying dopant into a physically exposed portion of a metal gate layer composed of an n-type workfunction TiN. The threshold voltage modifying dopant changes the threshold voltage of the original metal gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.