Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells

US10937904B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Haitao Liu · Boise, US
• Kamal M. Karda · Boise, US
• Albert Fayrushin · Seojong-myeon, KR

Key dates

• Filing date: Feb 7, 2018
• Grant date: Mar 2, 2021
• Expiry date: Feb 7, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

A programmable charge-storage transistor comprises channel material, insulative charge-passage material, charge-storage material, a control gate, and charge-blocking material between the charge-storage material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material. Arrays of elevationally-extending strings of memory cells of memory cells are disclosed, including methods of forming such. Other embodiments, including method, are disclosed.