Etching composition additive, method for preparing the same and etching composition comprising the same
US10941341B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 7, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Oct 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.