Patent · US Active

Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material

US10943655B2 · kind B2 · utility

2Cited by

4References

25Claims

0Family size

Assignee

Hefei Reliance Memory Limited · CN

Inventors

Zhichao Lu · San Jose, US
Brent Haukness · Monte Sereno, US
Gary B. Bronner · Stormville, US

Key dates

Filing date	Aug 22, 2017
Grant date	Mar 9, 2021
Priority date	—
Expiry date	Aug 22, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0083
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The embodiments herein describe technologies of initializing resistive memory devices (e.g., non-volatile and volatile memory devices). In one method, a first voltage is applied across a resistance change material of a memory cell to form an initial filament and multiple cycles are performed to condition the initial filament. Each of the multiple cycles includes: applying a second voltage with a first polarity across the resistance change material; and applying a third voltage with a second polarity across the resistance change material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.