Method for manufacturing a substrate
US10943778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Sep 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02574
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.