Inventor · Meylan, FR

Pascal Guenard

21Patents
4h-index
16Co-inventors
56Inventor score

Filing activity: Dec 22, 2008 → Nov 10, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7981767B2 Methods for relaxation and transfer of strained layers and structures fabricated thereby Emerging Cross-Sectional Technologies 12 Active
US7736935B2 Passivation of semiconductor structures having strained layers Electricity 7 Active
US9478707B2 Method of manufacturing structures of LEDs or solar cells Emerging Cross-Sectional Technologies 6 Active
US11711065B2 Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device Electricity 4 Active
US10608610B2 Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device Electricity 2 Active
US8492244B2 Methods for relaxation and transfer of strained layers and structures fabricated thereby Emerging Cross-Sectional Technologies 1 Active
US9224921B2 Method for forming a buried metal layer structure Emerging Cross-Sectional Technologies 1 Active
US9412904B2 Structured substrate for LEDs with high light extraction Electricity 1 Active
USD1038180S1 Textile machine General 1 Active
US9865786B2 Method of manufacturing structures of LEDs or solar cells Emerging Cross-Sectional Technologies 1 Active
US10924081B2 Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device Electricity 1 Active
US12143093B2 Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device Electricity 0 Active
USD1090643S1 Textile machine General 0 Active
US12316298B2 Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate Electricity 0 Active
US11652464B2 Surface acoustic wave device and associated production method Electricity 0 Active
US12272540B2 Method for manufacturing a substrate Electricity 0 Active
US10943778B2 Method for manufacturing a substrate Electricity 0 Active
US8785293B2 Adaptation of the lattice parameter of a layer of strained material Electricity 0 Active
US11837463B2 Method for manufacturing a substrate Electricity 0 Active
US9041165B2 Relaxation and transfer of strained material layers Electricity 0 Active
US11702771B2 Shedding mechanism and jacquard-type weaving loom equipped with such a mechanism Textiles; Paper 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.