Integrated memory having the body region comprising a different semiconductor composition than the source/drain region
US10943915B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
Some embodiments include an assembly having a memory cell with an active region which includes a body region between a pair of source/drain regions. A charge-storage material is adjacent to the body region. A conductive gate is adjacent to the charge-storage material. A hole-recharge arrangement is configured to replenish holes within the body region during injection of holes from the body region to the charge-storage material. The hole-recharge arrangement includes a heterostructure active region having at least one source/drain region of a different composition than the body region, and/or includes an extension coupling the body region with a hole-reservoir. A wordline is coupled with the conductive gate. A first comparative digit line is coupled with one of the source/drain regions, and a second comparative digit line is coupled with the other of the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.