Semiconductor device having a semiconductor body composed of silicon carbide

US10943979B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andre Rainer Stegner · Unterhaching, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Feb 15, 2019
• Grant date: Mar 9, 2021
• Expiry date: Feb 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure relates to a semiconductor device having a SiC semiconductor body. The SiC semiconductor body includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first semiconductor region is electrically contacted at a first surface of the SiC semiconductor body and forms a pn junction with the second semiconductor region. The first semiconductor region and the second semiconductor region are arranged one above the other in a vertical direction perpendicular to the first surface. The first semiconductor region has a first dopant species and a second dopant species.