Thermally stable salicide formation for salicide first contacts
US10943988B2 · kind B2 · utility
1Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Jul 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes epitaxially grown source/drain (S/D) regions each having a cross-sectional quadrilateral shape formed on a semiconductor fin on opposite sides of a transversely disposed gate structure. The S/D regions include top (111) facets on top halves of the cross-sectional quadrilateral shape. The device further includes a silicide formed on the top (111) facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.