Magnetic tunnel junction structures and methods of manufacture thereof
US10944050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2019 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Apr 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.