Reducing chemoepitaxy directed self-assembled defects
US10949601B2 · kind B2 · utility
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Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising expanding a shape of the guiding pattern by a predetermined distance in both lateral directions to form a fin keep mask, where the fin keep mask comprises a stand-alone mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.