Preread and read threshold voltage optimization
US10950315B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Dec 16, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.