Pulsed plasma deposition etch step coverage improvement
US10950430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Jun 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.