Redistribution substrate, method of fabricating the same, and semiconductor package including the same
US10950539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2019 |
| Grant date | Mar 16, 2021 |
| Priority date | — |
| Expiry date | Mar 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A redistribution subtrate, a method of fabricating the same, and a semiconductor package are provided. The method including forming a first conductive pattern; forming a first photosensitive layer on the first conductive pattern, the first photosensitive layer having a first through hole exposing a first portion of the first conductive pattern; forming a first via in the first through hole; removing the first photosensitive layer; forming a first dielectric layer that encapsulates the first conductive pattern and the first via, the first dielectric layer exposing a top surface of the first via; and forming a second conductive pattern on the top surface of the first via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.