Temporal atomic layer deposition process chamber
US10954596B2 · kind B2 · utility
3Cited by
22References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2017 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dual channel showerhead comprising a first plurality of channels formed in the back surface of the showerhead and extending from a first end to a second end, a second plurality of channels formed through the thickness of the showerhead and extending from a first end to a second end, a first end plenum in fluid connection with the second plurality of channels at the first end and a second end plenum in fluid connection with the second plurality of channels at the second end. Processing chambers including the dual channel showerhead and a blocker ring separating the edge ring from the pumping ring are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.